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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4508 DESCRIPTION With TO-220F package High breakdown voltage High speed switching performance APPLICATIONS For switching regulator and general purpose power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 500 Collector-base voltage Open emitter Collector-emitter voltage Open base 400 7 10 TC=25ae 40 150 -55~150 Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature Open collector UNIT V V V A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SC4508 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustainig voltage IC=100mA ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A 0.8 V VBEsat Base-emitter saturation voltage IC=4A ;IB=0.8A 1.2 V ICBO Collector cut-off current VCB=450V; IE=0 100 |I A IEBO hFE-1 hFE-2 NDU ICO E SEM ANG INCH Emitter cut-off current VEB=7V; IC=0 DC current gain IC=1A ; VCE=5V 25 DC current gain IC=4A ; VCE=5V 20 TOR 65 100 |I A 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4508 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions 3 |
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